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| SMD Efficient Fast Recovery Rectifier CEFL101-G Thru CEFL105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Built-in strain relief High surge current capability 0.022 (0.56) 0.018 (0.46) 0.205 (5.20) 0.185 (4.70) DO-213AB (PLASTIC MELF) Mechanical Data: Case: JEDEC DO-213AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.116 gram 0.105 (2.67) 0.095 (2.41) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics: Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CEFL101-G 50 50 35 CEFL102-G 100 100 70 CEFL103-G CEFL104-G CEFL105-G 200 200 140 400 400 280 600 600 420 Unit V V V VRRM VDC VRMS IFSM Io VF Trr IR R JL 30 A 1.0 0.875 25 1.1 35 1.25 50 A V nS uA o 5.0 250 50 -55 to +155 -55 to +125 C/W o Tj TSTG C oC Note1: Thermal resistance from junction to lead 8.0mm square (0.13mm thick) land areas. "-G" suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFL101-G thru CEFL105-G) Fig. 1 - Reverse characteristics 100 Fig.2 - Forward characteristics 10 10 FL CE Reverse current (mA) FL 10 CE 4 10 Forward Current (A) 1.0 1- 10 Tj=125 C 3 1 0.1 0.1 Tj=25 C 0.01 Tj=25 C Pulse width 300uS 1% duty cycle 0.01 0 15 30 45 60 75 90 105 120 135 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.4 Percent of rated peak reverse voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance 35 30 50 Fig.4 - Non Repetitive Forward Surge Curre 8.3ms single half sine wave JEDEC method Peak Surge Forward Current (A) f = 1 MHz and applied 4VDC reverse voltage Junction Capacitance (pF) 40 25 Tj=25 C 20 15 10 CEFL104 -105 5 0 0.01 0.1 1.0 10 100 CEFL101-103 30 Tj=25 C 20 10 0 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test circuit diagram and Reverse recovery time characteristics 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A | | | | | | | | 1.2 Average forward current ( A ) (+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A 0.8 0.6 0.4 0.2 0 CE 1.0 FL Tj=80 C Fig. 6 - Current derating curve NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 10 5 Single phase Half wave 60Hz 25 50 75 100 125 150 175 Ambient temperature ( C) "-G" suffix designates RoHS compliant Version www.comchiptech.com Page2 |
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